Infineon IPD60R180P7: A High-Performance 600V CoolMOS™ P7 Power Transistor

In the realm of power electronics, efficiency, reliability, and thermal performance are paramount. The Infineon IPD60R180P7 stands out as a premier 600V power transistor engineered to meet these demanding requirements. As a member of Infineon’s advanced CoolMOS™ P7 family, this device is tailored for high-efficiency switching applications across a diverse range of industries, including industrial power supplies, telecom systems, lighting, and renewable energy solutions.

A key highlight of the IPD60R180P7 is its exceptionally low on-state resistance (RDS(on)) of just 180 mΩ. This ultra-low resistance is critical for minimizing conduction losses, which directly translates to higher overall system efficiency and reduced heat generation. By operating cooler, the device enhances long-term reliability and can often enable the use of smaller heat sinks, contributing to more compact and cost-effective designs.

The transistor is built upon Infineon’s revolutionary superjunction (SJ) technology, which sets a new benchmark for high-voltage MOSFETs. This technology allows the IPD60R180P7 to achieve an outstandingly low figure of merit (RDS(on) x Qg), striking an optimal balance between switching losses and conduction losses. This makes it exceptionally suitable for high-frequency switch-mode power supplies (SMPS), where fast switching is essential for size reduction and performance.

Furthermore, the CoolMOS™ P7 series incorporates enhanced ruggedness and durability. The device offers improved avalanche robustness and a higher tolerance to dynamic switching events, ensuring stable operation even under harsh conditions. Its integrated fast body diode also contributes to superior hard commutation robustness, a vital feature for circuits like power factor correction (PFC).

From a design-in perspective, the TO-220 package offers both flexibility and excellent thermal characteristics, making it a preferred choice for engineers. The Infineon IPD60R180P7 empowers designers to push the boundaries of power density and efficiency, enabling the next generation of energy-saving electronic products.

ICGOODFIND: The Infineon IPD60R180P7 is a top-tier 600V MOSFET that exemplifies technological leadership, offering designers a perfect blend of ultra-low conduction loss, superior switching performance, and enhanced robustness for high-efficiency power applications.

Keywords: CoolMOS™ P7, Ultra-Low RDS(on), Superjunction Technology, High-Efficiency Switching, Power Transistor