Infineon BSC160N15NS5ATMA1 150V OptiMOS 5 Power MOSFET Datasheet and Application Review

The relentless pursuit of higher efficiency and power density in modern electronics has driven significant advancements in power semiconductor technology. Infineon's BSC160N15NS5ATMA1, a member of the esteemed OptiMOS™ 5 150 V family, stands as a testament to this progress, offering a compelling blend of performance, robustness, and integration for a wide array of demanding applications.

This N-channel power MOSFET is engineered to minimize losses in power conversion systems. Its cornerstone feature is its exceptionally low figure-of-merit (FOM), characterized by an ultra-low on-state resistance (RDS(on)) of just 16 mΩ maximum at 10 V VGS. This low resistance is paramount in reducing conduction losses, which directly translates into higher efficiency, especially in high-current scenarios. Furthermore, the device boasts superior switching performance, thanks to its low gate charge (Qg) and output charge (Qoss). This combination ensures that switching transitions are both rapid and smooth, significantly minimizing switching losses that typically plague high-frequency operation. This makes the MOSFET an ideal candidate for switch-mode power supplies (SMPS) operating at elevated frequencies, enabling the use of smaller passive components and thus increasing overall power density.

Beyond its raw electrical characteristics, the BSC160N15NS5ATMA1 is designed for reliability and ease of use. It features a logic-level compatible gate threshold, allowing it to be driven directly by 3.3 V or 5 V microcontroller outputs, simplifying gate drive circuit design. The device is also housed in a SuperSO8 package (PG-TDSON-8), which offers an excellent thermal-to-RDS(on) ratio. This package provides a very low junction-to-case thermal resistance, ensuring efficient heat dissipation away from the silicon die, which is critical for maintaining performance and long-term reliability under continuous high-load conditions.

A thorough review of its datasheet reveals key specifications that designers must consider:

Drain-Source Voltage (VDS): 150 V

Continuous Drain Current (ID): 42 A at TC = 100°C

RDS(on) (max): 16 mΩ at VGS = 10 V, ID = 21 A

Gate Threshold Voltage (VGS(th)): 2.3 V (typ)

Total Gate Charge (Qg): 26 nC (typ) at VGS = 10 V

In application, this MOSFET excels in a diverse range of fields. It is particularly well-suited for:

High-Efficiency DC-DC Converters in telecom and server power supplies.

Motor Control and Drives for industrial automation, robotics, and eMobility.

Solar Inverters and other renewable energy systems.

Synchronous Rectification stages in SMPS to replace traditional diodes, further boosting efficiency.

ICGOOODFIND: The Infineon BSC160N15NS5ATMA1 OptiMOS™ 5 MOSFET is a high-performance solution that successfully addresses the key challenges of power design: efficiency, power density, and thermal management. Its optimal balance of low RDS(on) and switching losses makes it a superior choice for engineers aiming to push the boundaries of their power conversion systems.

Keywords: OptiMOS™ 5, Low RDS(on), High-Efficiency, Power Density, SuperSO8 Package.